Ukufuthwa kwe-wafer kuyinqubo ebalulekile ekukhiqizweni kwe-semiconductor, okuhlanganisa ukusebenza kwe-dopant, ukubuyiselwa kwe-lattice, kanye nokwakheka kwe-ultra-shallow junction (USJ). Ukufuthwa kwe-furnace evamile kanye nokucubungula ukushisa okusheshayo (RTP) kuhlushwa yisabelomali esiphezulu sokushisa, ukusabalala kwe-dopant okulawulwa kabi, kanye nokufana okwanele, okwenza kunganele kuma-node obuchwepheshe obuthuthukisiwe ku-7 nm, 5 nm, nangaphezulu—ikakhulukazi kuzakhiwo ze-Gate-All-Around (GAA) kanye ne-3D NAND flash memory. Ukufuthwa kwe-wafer okusekelwe ku-laser, nge-transient high-energy irradiation yayo, ukunemba kwendawo kwe-micron, kanye nokusabalala okuncane kokushisa, kuvele njengenqubo eyinhloko yesizukulwane esilandelayo yokuhlangabezana nalezi zidingo zokukhiqiza ezidingayo.
Isimiso Esiyinhloko Sokushisa Nge-Laser
Ikhanda lokushisa le-laser ye-Wave Optics linomklamo okhethekile wokukhanya ohlinzeka ngemisebe ye-laser enamandla aphezulu, efanayo ngokushisa ukuze kukhanye ngokunemba izindawo ze-wafer. I-laser eluhlaza inikeza ukuhambisana okuhle kakhulu kokumuncwa nezinto ezisekelwe ku-silicon (kufaka phakathi i-SiC), okuvumela ukwelashwa kokushisa okusebenzayo kakhulu ngaphandle kokulimaza i-wafer. Lokhu kusiza ukuphinda kusetshenziswe ungqimba olulimele olufakwe kuma-ion kanye nokusebenza kahle kwe-dopant. Ngemva kwalokho, ukuqhuba okuphezulu kokushisa kwe-substrate kwenza ukupholisa okusheshayo kakhulu, okuqandisa isakhiwo se-lattice futhi kucindezele ukusabalala kwe-dopant. Le nqubo iphumelela ekukhiqizeni ama-junctions angajulile kakhulu kokubili ukusebenza kahle okuphezulu kanye nephrofayili ye-junction ejulile (ngokuzumayo).
Ukufakwa Kwe-Laser Heating Kubalulekile Ekuthuthukiseni Isivuno Sokucubungula I-Wafer
- Ukufana Kwemisebe: Ukufana kwamandla kwendawo yemisebe eyisicaba idlula u-95% (okuvamile), okuqeda ukuncibilika ngokweqile kwendawo noma ukuncipha komswakama.
- Ukuzinza Kwamandla: Ukuguquguquka kwamandla okukhipha okuqhubekayo kungaphansi kuka-2%, okuqinisekisa ukuhambisana okuhle kakhulu kwe-wafer kuya ku-wafer kanye ne-batch-to-batch.
- Ukunemba Komfanekiso Womphezulu: Izingxenye ezibonakalayo zinenani le-PV/RMS elilinganiselwe nge-nanometer elinokuhlanekezela kwe-wavefront okulawulwa kahle, okuvimbela umonakalo we-hot-spot.
- Ukujula Kokugxila kanye Nokwakheka Kwemisebe: Ukujula kokugxila okwenziwe ngokwezifiso okuhlanganiswe nokuhlanganiswa kwemisebe kusekela ukuskenwa kwensimu yonke kwama-wafers amakhulu.
- Ukufaniswa Kwamagagasi: Kwenzelwe ama-waveband anamandla okumunca kakhulu e-silicon kanye nama-semiconductor esizukulwane sesithathu (isb., i-SiC, i-GaN) ukuze kwandiswe ukusebenza kahle kwamandla.
Izinzuzo Ezintathu Eziyinhloko Kunokufakwa Kwe-Annealing Okuvamile
1. Ukunciphisa okuhle kakhulu ukusabalala kwe-dopant -Ukuvezwa kokushisa kunqunyelwe ebangeni le-nanosecond-to-millisecond eline-dopant diffusion ecishe ibe yi-zero, ikhono elingatholakali ngokufaka i-furnace noma i-RTP.
2. Isabelomali esiphansi sokushisa kanye nomonakalo omncane wedivayisi - Indawo ye-wafer kuphela ebhekana nokushisa okuphezulu kwesikhashana, okuholela ekungaguquguquki kokushisa kwesakhiwo se-substrate noma sedivayisi kanye nokuwohloka kobuso.
3. Ukunamathisela indawo ekhethiwe kahle - Amachashaza e-micron-scale beam asekela ukunamathisela kwendawo ukuze kuhlanganiswe i-3D kanye namadivayisi ahlanganisiwe angafani.
Izimo Zohlelo Lokusebenza
Izinhlelo zokusebenza zifaka phakathi ukusebenza komthombo/ukukhipha amanzi, ukulungiswa kwesiteshi, kanye nokufakwa kwe-ohmic contact annealing kwe-logic ethuthukisiwe (GAA/CFET), i-DRAM/3D NAND, amadivayisi kagesi e-SiC/GaN, i-SOI, kanye namadivayisi e-micro/nano. Ukufakwa kwe-laser annealing kuletha ukuthuthukiswa ngasikhathi sinye ekusebenzeni kahle kwe-indueld kanye nedivayisi.
Ukufuthwa kwe-laser kushintsha ukucutshungulwa kwe-wafer kusuka ekufuthweni kwe-global (blanket) kuya ekufuthweni kwe-local okunembile. Ubuchwepheshe bayo obunamandla bokukhanya busekela ukukhuliswa okuqhubekayo kanye nokuphumelela kokusebenza kwama-semiconductor node athuthukile.
Ishidi Lokucaciswa Komkhiqizo
| Ipharamitha | Imininingwane |
| Amandla | 60-20000W |
| Ubude begagasi | Okungenziwa ngokwezifiso: 355/450/532/915/980/1080nm kanye namanye ama-waveband |
| Imbobo Yezinombolo (NA) | Okungenziwa ngezifiso |
| Indawo Esebenzayo Yokwenziwa Kwe-Homogenization | Okungenziwa ngezifiso |
| Ubude be-Focal | ≥500mm (ethintekile yindawo yokuhlangana) |
| Ukupholisa | Ukupholisa Amanzi |
| Isisindo | 10kg |
| Ubukhulu | Okungenziwa ngezifiso |
| Abanye | Ongakukhetha: Imodyuli yokuthola izinga lokushisa le-infrared, imodyuli yokuthola ukungcola kwesibuko esivikelayo |
Isikhathi sokuthunyelwe: Julayi-23-2026

